Vishay SQJ738EP Dual N-Channel Single MOSFETs, 123 A, 40 V Enhancement, 4-Pin PowerPAK SQJ738EP-T1_GE3
- N° de stock RS:
- 653-066
- Référence fabricant:
- SQJ738EP-T1_GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
3 390,00 €
(TVA exclue)
4 110,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 1,13 € | 3 390,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-066
- Référence fabricant:
- SQJ738EP-T1_GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK | |
| Series | SQJ738EP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00317Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 93W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK | ||
Series SQJ738EP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00317Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 93W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The Vishay automotive-grade dual N-channel MOSFET designed for high-efficiency switching in demanding environments. It supports up to 40 V drain-source voltage and operates reliably at junction temperatures up to 175 °C. Packaged in PowerPAK SO-8L, it utilizes TrenchFET Gen IV technology for enhanced thermal and electrical performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
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