Vishay SQ2308FES Type N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308FES-T1_GE3

N° de stock RS:: 653-059
Référence fabricant:: SQ2308FES-T1_GE3
Fabricant:: Vishay

Vishay SQ2308FES Type N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308FES-T1_GE3

Actuellement indisponible

Désolés, nous ne savons pas quand ce produit sera réapprovisionné.

Produit de remplacement

Ce produit n'est pas disponible actuellement. Voici notre produit de remplacement:

Vishay SQ2308FES Type N-Channel Single MOSFETs, 2.3 A, 60 V Enhancement, 3-Pin SOT-23

N° de stock RS: 653-060

1 ruban de 1

0,32 €

(TVA exclue)

0,39 €

(TVA incluse)

N° de stock RS:: 653-059
Référence fabricant:: SQ2308FES-T1_GE3
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	60V
	Series	SQ2308FES
	Package Type	SOT-23
	Mount Type	PCB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.15Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Typical Gate Charge Qg @ Vgs	5.3nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Width	2.64mm
	Length	3.04mm
	Standards/Approvals	RoHS
	Height	1.12mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 60V
	Series SQ2308FES
	Package Type SOT-23
	Mount Type PCB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.15Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Typical Gate Charge Qg @ Vgs 5.3nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Width 2.64mm
	Length 3.04mm
	Standards/Approvals RoHS
	Height 1.12mm
	Automotive Standard AEC-Q101

Datasheet - SQ2308FES-T1_GE3

Vishay SQ2308FES Series Single MOSFETs, 60V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - SQ2308FES-T1_GE3

This single MOSFET device is a compact N-channel enhancement-mode transistor designed for general switching and amplification tasks in PCB-mounted circuits. It operates across a wide thermal range suitable for demanding environments and is supplied in a SOT-23 surface-mount package for space-conscious board layouts.

Features and Benefits:

• 60V drain-source rating enables higher-voltage switching
• 2.3A continuous drain current allows moderate load handling
• 0.15Ω low Rds(on) reduces conduction losses
• 2W power dissipation supports steady-state thermal loading
• 5.3nC typical gate charge offers responsive switching performance
• 20V maximum gate voltage provides robust gate-drive margin

Applications

• Suitable for automotive sensor interface circuits
• Ideal for DC/DC converter switching stages
• Used with motor-driver pre-drivers and low-power actuators
• Can be used for load switching in telematics modules
• Suitable for battery-management protection and control

What ambient temperatures can this component endure in operation?

It is rated to function from -55°C up to 175°C, permitting use in extreme thermal environments.

How is the device packaged for PCB assembly?

It arrives in a SOT-23 surface-mount package with three pins optimised for automated SMT placement.

What gate-drive limitations should designers observe?

The gate-to-source voltage must not exceed 20V to avoid gate-oxide stress.

How does its channel topology affect circuit design?

As an N-channel enhancement device, it requires a positive gate voltage relative to the source to conduct, suitable for low-side switching.