Microchip 2N6660 Type N-Channel Single MOSFETs, 410 mA, 60 V Enhancement, 3-Pin TO-39 2N6660
- N° de stock RS:
- 649-369
- Référence fabricant:
- 2N6660
- Fabricant:
- Microchip
Offre groupée disponible
Sous-total (1 unité)*
19,76 €
(TVA exclue)
23,91 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 478 unité(s) expédiée(s) à partir du 02 février 2026
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 19,76 € |
| 5 + | 19,18 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 649-369
- Référence fabricant:
- 2N6660
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 410mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N6660 | |
| Package Type | TO-39 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 6.25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 410mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N6660 | ||
Package Type TO-39 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 6.25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- TH
The Microchip N-Channel, Enhancement-Mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This com-binational produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low Ciss and fast switching speeds
Excellent thermal stability
Liens connexes
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