Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G
- N° de stock RS:
- 644-261
- Référence fabricant:
- 2N7002-G
- Fabricant:
- Microchip
Offre groupée disponible
Sous-total (1 ruban de 10 unités)*
5,76 €
(TVA exclue)
6,97 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 560 unité(s) expédiée(s) à partir du 30 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 10 - 90 | 0,576 € | 5,76 € |
| 100 - 490 | 0,506 € | 5,06 € |
| 500 - 990 | 0,455 € | 4,55 € |
| 1000 + | 0,366 € | 3,66 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 644-261
- Référence fabricant:
- 2N7002-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1.12mm | |
| Width | 1.3 mm | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1.12mm | ||
Width 1.3 mm | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- TH
The Microchip N-Channel a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Free from Secondary Breakdown
Low Power Drive Requirement
Ease of Paralleling
Liens connexes
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002-7-F
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002E-7-F
- Diodes Inc 2N7002 Plastic N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002EQ-7-F
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002LT3G
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002LT1G
- Nexperia N-Channel MOSFET 60 V115
- Microchip TN2106 N-Channel MOSFET 60 V, 3-Pin SOT-23 TN2106K1-G