onsemi NTM Type N-Channel MOSFET, 310 A, 40 V Enhancement, 8-Pin DFN-8 NTMFSC0D8N04XMTWG
- N° de stock RS:
- 277-046
- Référence fabricant:
- NTMFSC0D8N04XMTWG
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 ruban de 5 unités)*
5,93 €
(TVA exclue)
7,175 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 375 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 1,186 € | 5,93 € |
| 50 - 95 | 1,128 € | 5,64 € |
| 100 - 495 | 1,044 € | 5,22 € |
| 500 - 995 | 0,962 € | 4,81 € |
| 1000 + | 0,924 € | 4,62 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 277-046
- Référence fabricant:
- NTMFSC0D8N04XMTWG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 310A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTM | |
| Package Type | DFN-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.78mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 135W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.15 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 5.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 310A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTM | ||
Package Type DFN-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.78mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 135W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Width 6.15 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 5.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Ultra low gate charge
High speed switching with low capacitance
Soft body diode reverse recovery
Extreme lower on resistance to minimize conduction losses
Device is Pb Free and RoHS compliant
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