Infineon IMBG65 Type N-Channel MOSFET, 170 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1
- N° de stock RS:
- 351-987
- Référence fabricant:
- IMBG65R009M1HXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
43,75 €
(TVA exclue)
52,94 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 1 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité |
|---|---|
| 1 - 9 | 43,75 € |
| 10 - 99 | 39,38 € |
| 100 + | 36,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-987
- Référence fabricant:
- IMBG65R009M1HXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 555W | |
| Series | IMBG65 | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.45 mm | |
| Length | 10.2mm | |
| Standards/Approvals | JEDEC | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 555W | ||
Series IMBG65 | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 9.45 mm | ||
Length 10.2mm | ||
Standards/Approvals JEDEC | ||
Height 4.5mm | ||
Automotive Standard No | ||
The Infineon CoolSiC is built over the solid silicon carbide technology. Leveraging the wide bandgap SiC material characteristics, it offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Superior gate oxide reliability
Increased avalanche capability
Compatible with standard drivers
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