Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 61 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
- N° de stock RS:
- 284-718
- Référence fabricant:
- IMT65R039M1HXUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2000 unités)*
20 484,00 €
(TVA exclue)
24 786,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 31 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 10,242 € | 20 484,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-718
- Référence fabricant:
- IMT65R039M1HXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 51mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 263W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC MOSFET 650 V G1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 51mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 263W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650 V G1 is a pioneering power device that delivers exceptional performance by harnessing the Advanced properties of silicon carbide technology. Designed for high efficiency and reliability, this MOSFET excels in applications demanding outstanding thermal stability and elevated performance under harsh conditions. With an innovative gate oxide structure and superior switching behaviour, it significantly reduces losses at higher currents, ensuring longevity and safety in various electrical environments. Perfectly suited for applications including power supply systems, EV charging infrastructure, and renewable energy solutions, the CoolSiC MOSFET stands as a versatile solution that meets the demanding requirements of modern power electronics. This device is a testament to over 20 years of engineering excellence, serving as a robust foundation for next generation energy solutions.
Optimised switching enhances performance
Robust body diode ensures reliable commutation
Excellent thermal management extends lifetimes
Efficient operation at elevated temperatures
Seamless integration with standard drivers
Kelvin source reduces switching losses
Complies with JEDEC standards for reliability
Versatile for enhanced power density in designs
Liens connexes
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