Infineon IPQC60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T010S7AXTMA1
- N° de stock RS:
- 351-946
- Référence fabricant:
- IPQC60T010S7AXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
28,55 €
(TVA exclue)
34,55 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 750 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 28,55 € |
| 10 - 99 | 25,70 € |
| 100 + | 23,69 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-946
- Référence fabricant:
- IPQC60T010S7AXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HDSOP-22 | |
| Series | IPQC60 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 0.01Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 694W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.43 mm | |
| Standards/Approvals | AEC Q101 | |
| Length | 15.5mm | |
| Height | 2.35mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HDSOP-22 | ||
Series IPQC60 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 0.01Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 694W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Maximum Operating Temperature 150°C | ||
Width 10.43 mm | ||
Standards/Approvals AEC Q101 | ||
Length 15.5mm | ||
Height 2.35mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
The Infineon CoolMOS S7TA with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation and functional safety. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, battery disconnect, and eFuses.
Minimized conduction losses
Increased system performances
Allowing more compact design over EMR
Lower TCO over prolonged time
Enabling higher power density designs
Reduction of external sensing elements
Best utilization of power transistor
Liens connexes
- Infineon IPQC60 Type N-Channel MOSFET 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T010S7XTMA1
- Infineon IPDQ60 Type N-Channel MOSFET 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7AXTMA1
- Infineon IPDQ60 Type N-Channel MOSFET 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R016M1HXUMA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R008M1HXUMA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R140M1HXUMA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R040M1HXUMA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R020M1HXUMA1