Infineon IPQC60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60T010S7AXTMA1
- N° de stock RS:
- 351-946
- Référence fabricant:
- IPQC60T010S7AXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
32,32 €
(TVA exclue)
39,11 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 32,32 € |
| 10 - 99 | 29,10 € |
| 100 + | 26,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-946
- Référence fabricant:
- IPQC60T010S7AXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPQC60 | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 0.01Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 694W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.5mm | |
| Standards/Approvals | AEC Q101 | |
| Height | 2.35mm | |
| Width | 10.43 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPQC60 | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 0.01Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 694W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.5mm | ||
Standards/Approvals AEC Q101 | ||
Height 2.35mm | ||
Width 10.43 mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
The Infineon CoolMOS S7TA with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation and functional safety. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, battery disconnect, and eFuses.
Minimized conduction losses
Increased system performances
Allowing more compact design over EMR
Lower TCO over prolonged time
Enabling higher power density designs
Reduction of external sensing elements
Best utilization of power transistor
Liens connexes
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