Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1
- N° de stock RS:
- 351-942
- Référence fabricant:
- IPDQ60T010S7XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
31,09 €
(TVA exclue)
37,62 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- 750 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 31,09 € |
| 10 - 99 | 27,99 € |
| 100 + | 25,79 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-942
- Référence fabricant:
- IPDQ60T010S7XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HDSOP-22 | |
| Series | IPDQ60 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 0.022Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 694W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Standards/Approvals | JEDEC | |
| Width | 15.5 mm | |
| Length | 15.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HDSOP-22 | ||
Series IPDQ60 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 0.022Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 694W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Standards/Approvals JEDEC | ||
Width 15.5 mm | ||
Length 15.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolMOS S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS.
Minimized conduction losses
Increased system performances
Allow more compact design over EMR
Lower TCO over prolonged time
Enabling higher power density designs
Reduction of external sensing elements
Best utilization of power transistor
Liens connexes
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