Infineon IMZA65 Type N-Channel MOSFET, 53 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R033M2HXKSA1
- N° de stock RS:
- 351-871
- Référence fabricant:
- IMZA65R033M2HXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
13,68 €
(TVA exclue)
16,55 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 240 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 13,68 € |
| 10 - 99 | 12,31 € |
| 100 + | 11,36 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-871
- Référence fabricant:
- IMZA65R033M2HXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 194W | |
| Package Type | PG-TO247-4 | |
| Series | IMZA65 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Width | 21.1 mm | |
| Length | 15.9mm | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 194W | ||
Package Type PG-TO247-4 | ||
Series IMZA65 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Width 21.1 mm | ||
Length 15.9mm | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Infineon CoolSiC MOSFET 650 V, 33 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Excellent figures of merit (FOMs)
Best in class RDS(on)
High robustness and overall quality
Flexible driving voltage range
Support for unipolar driving (VGSoff=0)
Best immunity against turn-on effects
Improved package interconnect with .XT
4-pin package
Liens connexes
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