Infineon IPW Type N-Channel Power Transistor, 123 A, 600 V Enhancement, 4-Pin PG-TO-247 IPW60R016CM8XKSA1
- N° de stock RS:
- 349-265
- Référence fabricant:
- IPW60R016CM8XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
16,94 €
(TVA exclue)
20,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 240 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 16,94 € |
| 10 - 99 | 15,25 € |
| 100 + | 14,07 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-265
- Référence fabricant:
- IPW60R016CM8XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 123A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPW | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 521W | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 123A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPW | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 521W | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
Liens connexes
- Infineon IPW N-Channel MOSFET 600 V, 4-Pin PG-TO247-4 IPW60R037CM8XKSA1
- Infineon IPZ N-Channel MOSFET 600 V, 4-Pin PG-TO247-4 IPZA60R016CM8XKSA1
- Infineon IPZ N-Channel MOSFET 600 V, 4-Pin PG-TO247-4 IPZA60R037CM8XKSA1
- Infineon MOSFET, 63 A PG-TO247 IPW65R035CFD7AXKSA1
- Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
- Infineon MOSFET, 1200 V PG-TO247-4 IMZ120R060M1HXKSA1
- Infineon HEXFET MOSFET, 100 V PG-TO247 IRF100P218AKMA1
- Infineon HEXFET MOSFET, 150 V PG-TO247 IRF150P220AKMA1