Infineon IPT Type N-Channel Power MOSFET, 142 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1
- N° de stock RS:
- 349-256
- Référence fabricant:
- IPT60R016CM8XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
16,94 €
(TVA exclue)
20,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 1 828 unité(s) expédiée(s) à partir du 10 août 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 16,94 € |
| 10 - 99 | 15,26 € |
| 100 + | 14,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-256
- Référence fabricant:
- IPT60R016CM8XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 694W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 694W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon IPT Series Power MOSFET, 600V Drain Source Voltage, 142A Maximum Continuous Drain Current - IPT60R016CM8XTMA1
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power conversion roles in demanding electronic systems. It operates across a wide ambient range and is supplied in a compact surface-mount package for integration on populated boards where robust thermal and current handling are required.
Features and Benefits:
• 600V rating enables high-voltage switching applications
• 16mΩ Rds(on) reduces conduction losses during heavy load
• 142A continuous current supports high-current power stages
• 171nC typical gate charge allows quicker gate-drive transitions
• 694W maximum power dissipation aids thermal margin planning
• 30V gate tolerance supports flexible gate-drive voltages
• 16mΩ Rds(on) reduces conduction losses during heavy load
• 142A continuous current supports high-current power stages
• 171nC typical gate charge allows quicker gate-drive transitions
• 694W maximum power dissipation aids thermal margin planning
• 30V gate tolerance supports flexible gate-drive voltages
Applications
• Suitable for industrial motor inverter stages
• Ideal for high-voltage power supplies and converters
• Used with resonant and hard-switched SMPS topologies
• Can be used for traction and heavy-duty DC-DC systems
• Suitable for board-level power distribution and switching
• Ideal for high-voltage power supplies and converters
• Used with resonant and hard-switched SMPS topologies
• Can be used for traction and heavy-duty DC-DC systems
• Suitable for board-level power distribution and switching
What package and mounting method does it use for PCB assembly?
It is supplied in a PG-HSOF-8 package intended for surface-mount placement to facilitate automated assembly and thermal conduction to the board.
How does it perform across temperature extremes?
The device is rated to operate from -55°C up to 150°C, supporting applications exposed to wide temperature variations.
What gate-voltage limits should be observed during design?
Gate-source voltages must not exceed 30V to prevent gate-dielectric stress.
Is it compliant with any industry testing standards?
It meets JEDEC standards for semiconductor qualification and handling.
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