Infineon ISC Type N-Channel MOSFET, 63 A, 40 V, 8-Pin TDSON-8 FL ISC058N04NM5ATMA1

Sous-total (1 bobine de 5000 unités)*

1 515,00 €

(TVA exclue)

1 835,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Temporairement en rupture de stock
  • Expédition à partir du 29 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
la bobine*
5000 +0,303 €1 515,00 €

*Prix donné à titre indicatif

N° de stock RS:
234-7005
Référence fabricant:
ISC058N04NM5ATMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

40V

Series

ISC

Package Type

TDSON-8 FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.8mΩ

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

42W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

3.8mm

Width

1.1 mm

Standards/Approvals

No

Height

4.4mm

Automotive Standard

No

The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 63A continuous drain current. This product offers a Benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the Peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.

Battery powered application

LV motor drives

Very low on-resistanceRDS(on)

100% avalanche tested

175°C junction temperature

Superior thermal resistance

Low gate charge

Reduced switching losses

Suitable for operation at higher frequencies

N-channel

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

Liens connexes