Infineon ISC Type N-Channel MOSFET, 88 A, 200 V Enhancement, 8-Pin PG-TSON-8 ISC130N20NM6ATMA1
- N° de stock RS:
- 349-148
- Référence fabricant:
- ISC130N20NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
12,74 €
(TVA exclue)
15,42 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 5 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,37 € | 12,74 € |
| 20 - 198 | 5,735 € | 11,47 € |
| 200 + | 5,29 € | 10,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-148
- Référence fabricant:
- ISC130N20NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 88A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 242W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 88A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 242W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps to minimize conduction losses and improve system efficiency. With an excellent gate charge x RDS(on) product (FOM), this transistor ensures optimized switching performance. It also offers very low reverse recovery charge (Qrr), reducing switching losses and enhancing overall efficiency in fast-switching circuits. Designed to operate at a 175°C temperature, it provides high reliability in demanding environments and offers superior thermal performance for robust operation.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
100% avalanche tested
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