onsemi NTH Type N-Channel MOSFET, 151 A, 1200 V Enhancement, 4-Pin TO-247-4L NTH4L013N120M3S
- N° de stock RS:
- 220-567
- Référence fabricant:
- NTH4L013N120M3S
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 1 unité)*
28,06 €
(TVA exclue)
33,95 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- 418 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Paquet(s) | le paquet |
|---|---|
| 1 - 9 | 28,06 € |
| 10 - 99 | 25,25 € |
| 100 + | 23,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-567
- Référence fabricant:
- NTH4L013N120M3S
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247-4L | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 682W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 254nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a | |
| Height | 5mm | |
| Width | 15.6 mm | |
| Length | 16.2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247-4L | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 682W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 254nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a | ||
Height 5mm | ||
Width 15.6 mm | ||
Length 16.2mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The ON Semiconductor MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Halide Free
RoHS Compliant
Liens connexes
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