Infineon OptiMOS SiC N-Channel MOSFET, 151 A, 60 V, 8-Pin PG-TSON-8 IQE022N06LM5ATMA1

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
284-947
Référence fabricant:
IQE022N06LM5ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

151 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an OptiMOS 5 Power Transistor is designed to deliver unparalleled performance in high efficiency switch mode power supplies, facilitating synchronous rectification and exceptional thermal management. With a maximum drain source voltage rating of 60V, this N channel device operates efficiently under a variety of conditions, ensuring reliability and longevity in demanding applications. Engineered for industrial use, the product guarantees thorough compliance with JEDEC standards, making it ideally suited for challenging environments. Moreover, its compact PG TSON 8 package underlines its adaptability for space constrained designs, while its robust features ensure optimal power flow with minimal resistance and heat generation, enhancing overall system performance.

Optimised for high performance SMPS
Logic level N channel design for flexibility
Low on resistance reduces power loss
Superior thermal resistance for reliability
RoHS and halogen free compliant
100% avalanche tested for durability
Suitable for stringent industrial standards

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