Infineon CoolMOS Type N-Channel MOSFET, 36.5 A, 950 V Enhancement, 3-Pin PG-TO-247 IPW95R130PFD7XKSA1

Voir l’ensemble des MOSFETs
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
N° de stock RS:
284-922
Référence fabricant:
IPW95R130PFD7XKSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36.5A

Maximum Drain Source Voltage Vds

950V

Series

CoolMOS

Package Type

PG-TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

227W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an Advanced power device represents the latest innovation in super junction technology, specifically designed for demanding applications such as lighting and industrial power supplies. The integration of ultra fast body diodes enhances responsiveness, making it Ideal for resonant topologies. With robust performance and superior reliability, this device stands at the forefront of efficiency in power management. Special attention has been given to reducing reverse recovery charge, enabling higher switching frequencies and increased power density in designs.

Integrated fast body diode ensures reliability

Best in class thermal performance for efficient heat dissipation

Durable construction promotes long term stability

Seamless integration into existing circuits

Optimal for high voltage applications with enhanced safety

Compact package reduces PCB footprint and increases flexibility

Liens connexes