Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
284-791
Référence fabricant:
ISZ15EP15LMATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Package Type

PG-TSDSON-8 FL

Series

OptiMOS Power Transistor

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET is a high performance P channel MOSFET designed for demanding applications that require exceptional efficiency and reliability. This power transistor operates with a maximum drain source voltage of 150V, making it an excellent choice for various power switch applications. Built using advanced OptiMOS technology, it features a very low on resistance, ensuring minimal power loss during operation. Additionally, this component is fully compliant with RoHS and halogen free regulations, highlighting its environmentally friendly design. With rigorous avalanche testing and adherence to JEDEC standards for industrial applications, this device stands out as a robust and versatile option for engineers seeking to enhance their circuit designs with dependable technology.

Supports high voltage applications easily
Outstanding thermal performance and efficiency
Logic level threshold for easier driving
Compact package for space sensitive designs
100% avalanche tested for reliability

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