Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- N° de stock RS:
- 284-768
- Référence fabricant:
- IQE046N08LM5SCATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
10,31 €
(TVA exclue)
12,475 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 100 unité(s) expédiée(s) à partir du 12 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,062 € | 10,31 € |
| 50 - 95 | 1,958 € | 9,79 € |
| 100 - 495 | 1,816 € | 9,08 € |
| 500 - 995 | 1,67 € | 8,35 € |
| 1000 + | 1,608 € | 8,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-768
- Référence fabricant:
- IQE046N08LM5SCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is designed to deliver exceptional performance and reliability in high efficiency applications. Built for synchronous rectification in switch mode power supplies, this innovative MOSFET integrates Advanced thermal management features to ensure superior heat dissipation. Leveraging a logic level N channel configuration with extremely low on resistance, it guarantees efficient operation even at elevated temperatures. This component meets stringent industry standards while offering robust avalanche protection, making it a prime choice for industrial applications requiring high current handling and environmental toughness.
Optimised for high performance switching
Low on resistance enhances energy efficiency
Robust thermal performance for longevity
Avalanche tested for reliability
Pb free lead plating meets RoHS standards
Halogen free for eco friendly compliance
Ideal for stringent industrial applications
Compact package for easy integration
Liens connexes
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 8-Pin PG-WHSON-8 IQE065N10NM5SCATMA1