Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- N° de stock RS:
- 284-759
- Référence fabricant:
- IQE030N06NM5SCATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 6000 unités)*
9 486,00 €
(TVA exclue)
11 478,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 13 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 6000 + | 1,581 € | 9 486,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-759
- Référence fabricant:
- IQE030N06NM5SCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 132A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 132A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an optimos 5 power transistor is designed to excel in synchronous rectification applications, offering unparalleled performance and efficiency. With a robust design and state of the ART thermal management capabilities, this power MOSFET ensures reliable operation in demanding environments. Its superior thermal resistance makes it a prime choice for various industrial applications, ensuring that your systems operate with maximum reliability and minimal power loss. Fully compliant with RoHS regulations, this component prioritises eco friendliness while maintaining exceptional functionality.
High efficiency synchronous rectification
N channel configuration for effective performance
100% avalanche reliability tested
Halogen free materials for safer disposal
Wide industrial temperature range support
Minimal on state resistance reduces power loss
RoHS compliant for environmental sustainability
Liens connexes
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1
- Infineon OptiMOS 6 N-Channel MOSFET 40 V, 8-Pin PG-WHSON-8 IQDH45N04LM6SCATMA1
- Infineon OptiMOS 6 N-Channel MOSFET 40 V, 8-Pin PG-WHSON-8 IQD005N04NM6SCATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 60 V, 8-Pin PG-WHSON-8 IQD009N06NM5SCATMA1