Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- N° de stock RS:
- 284-754
- Référence fabricant:
- IQE022N06LM5SCATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 6000 unités)*
9 966,00 €
(TVA exclue)
12 060,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 6000 + | 1,661 € | 9 966,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-754
- Référence fabricant:
- IQE022N06LM5SCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC, IEC61249-2-21 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is a highly efficient MOSFET designed to meet the demands of Advanced power management applications. With a power dissipation capacity that allows it to operate reliably under intense conditions, this power transistor ensures optimal efficiency and thermal management. Its Pb free and RoHS compliant construction endorses its usability in eco sensitive applications, while also being halogen free, enhancing its adaptability across various sectors. Fully qualified according to JEDEC standards for industrial applications, it is a trusted component for engineers seeking reliable, high performance solutions.
Optimised for power management
Supports synchronous rectification in SMPS
N channel with logic level compatibility
Very low on resistance for thermal performance
Superior thermal resistance for reliability
100% avalanche tested for operational assurance
Complies with environmental regulations
Comprehensive validation for industrial use
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