Infineon 600V CoolMOS SiC N-Channel MOSFET, 90 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R025CFD7XTMA1

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-743
Référence fabricant:
IPDQ60R025CFD7XTMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

600 V

Package Type

PG-HDSOP-22

Series

600V CoolMOS

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features a CoolMOS CFD7 Power Transistor sets a new benchmark in high voltage power management, meticulously engineered for phase shift full bridge and LLC applications. Its innovative super junction technology ensures exceptional efficiency in resonant topologies, perfectly positioning it for soft switching environments. With a robust design that combines ultra fast body diode performance with minimal gate charge, this power transistor significantly enhances system reliability and performance. Ideal for diverse applications including server infrastructure, telecom systems, and electric vehicle charging, it exemplifies the pinnacle of efficiency and ruggedness. The CFD7 series heralds a sophisticated approach to power management, not just meeting but exceeding modern demands for energy efficiency and operational robustness.

Ultra fast body diode optimises switching
Low gate charge ensures high efficiency
Best in class reverse recovery improves performance
Rugged design withstands di/dt stress
Ideal for high power density solutions
Qualified per JEDEC for industrial use
Streamlined implementation simplifies design processes

Liens connexes