Infineon 600V CoolMOS SiC N-Channel MOSFET, 68 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R035CFD7XTMA1

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-746
Référence fabricant:
IPDQ60R035CFD7XTMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

600 V

Package Type

PG-HDSOP-22

Series

600V CoolMOS

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features a 600V CoolMOS CFD7 Power Transistor redefines high voltage MOSFET performance with its innovative super junction technology, providing unparalleled efficiency for demanding applications. This cutting edge component is designed to excel in soft switching topologies, making it ideal for phase shift full bridge and LLC resonant converters. By blending robust performance with user friendly application, this product empowers engineers to push the boundaries of power density and reliability without compromise. Underpinning its leading edge capabilities, the CoolMOS CFD7 series ensures that engineers achieve maximum efficiency with minimal design effort, allowing for quick time to market for your next project.

Ultra fast body diode boosts efficiency
Low gate charge simplifies drive requirements
Exceptional reverse recovery minimises losses
Maximises reliability in resonant topologies
Optimised thermal management increases power density
Qualified for industrial use per JEDEC
Improves design flexibility with easy implementation

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