Infineon 650V CoolMOS SiC N-Channel MOSFET, 45 A, 650 V, 22-Pin PG-HDSOP-22 IPDQ65R060CFD7XTMA1

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-877
Référence fabricant:
IPDQ65R060CFD7XTMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features a 650V CoolMOS CFD7 is an advanced power device designed to enhance efficiency in resonant switching topologies. This innovative MOSFET extends the capabilities of its predecessors, offering exceptional thermal performance and improved switching characteristics. With its fast body diode technology, the CoolMOS CFD7 ensures superior reliability and robustness in demanding applications. It is optimally suited for industrial switch mode power supplies, particularly in phase shift full bridge and LLC applications. This product has combination of high power density and outstanding efficiency makes it a preferred choice for engineers looking to elevate their designs in sectors such as telecom, solar, and electric vehicle charging systems.

Ultra fast body diode enhances overall efficiency
Provides ruggedness for reliable hard commutation
Exceeds stringent reliability standards for performance
Minimises switching losses for superior operation
Delivers robust safety margin for elevated bus voltages
Facilitates exceptional light load efficiency for industries
Supports advanced thermal management with low resistance

Liens connexes