onsemi NTB Type N-Channel MOSFET, 70 A, 650 V Enhancement, 7-Pin TO-263 NTBG023N065M3S
- N° de stock RS:
- 277-040
- Référence fabricant:
- NTBG023N065M3S
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
10,61 €
(TVA exclue)
12,84 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 800 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 10,61 € |
| 10 - 99 | 9,55 € |
| 100 - 499 | 8,80 € |
| 500 - 999 | 8,17 € |
| 1000 + | 6,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 277-040
- Référence fabricant:
- NTBG023N065M3S
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 263W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 6V | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.2mm | |
| Width | 9.9 mm | |
| Height | 15.4mm | |
| Standards/Approvals | RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection) | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 263W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 6V | ||
Maximum Operating Temperature 175°C | ||
Length 9.2mm | ||
Width 9.9 mm | ||
Height 15.4mm | ||
Standards/Approvals RoHS with exemption 7a, Pb-Free 2LI (on Second Level Interconnection) | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Ultra low gate charge
High speed switching with low capacitance
100% avalanche tested
Device is Halide Free and RoHS compliant
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