onsemi NTMFS Type N-Channel MOSFET, 414 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS0D5N04XMT1G
- N° de stock RS:
- 220-589
- Référence fabricant:
- NTMFS0D5N04XMT1G
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 ruban de 5 unités)*
14,95 €
(TVA exclue)
18,10 €
(TVA incluse)
Ajouter 30 unités pour bénéficier d'une livraison gratuite
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 2,99 € | 14,95 € |
| 50 - 95 | 2,842 € | 14,21 € |
| 100 - 495 | 2,626 € | 13,13 € |
| 500 - 995 | 2,422 € | 12,11 € |
| 1000 + | 2,332 € | 11,66 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-589
- Référence fabricant:
- NTMFS0D5N04XMT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 414A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 163W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 97.5nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 6 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 414A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 163W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 97.5nC | ||
Maximum Operating Temperature 175°C | ||
Width 6 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 5mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
Liens connexes
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