Nexperia Type N-Channel MOSFET, 100 A, 60 V Enhancement, 5-Pin LFPAK PSMN5R5-60YS,115

Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
219-492
Référence fabricant:
PSMN5R5-60YS,115
Fabricant:
Nexperia
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Marque

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

60V

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

8.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

130W

Maximum Operating Temperature

175°C

Width

4.1 mm

Length

5mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

No

The Nexperia N-Channel MOSFET is housed in an LFPAK package and qualified to 175°C. It is designed for a wide range of industrial, communications, and domestic applications. Key uses include motor control, server power supplies, DC-to-DC converters, lithium-ion battery protection and load switching.

Advanced TrenchMOS provides low RDSon and low gate charge

High efficiency in switching power converters

Improved mechanical and thermal characteristics

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