Nexperia PSM Type N-Channel MOSFET, 18 A, 100 V Enhancement, 5-Pin LFPAK PSMN075-100MSEX
- N° de stock RS:
- 219-414
- Référence fabricant:
- PSMN075-100MSEX
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
0,59 €
(TVA exclue)
0,71 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 0,59 € |
| 10 - 99 | 0,53 € |
| 100 - 499 | 0,49 € |
| 500 - 999 | 0,46 € |
| 1000 + | 0,41 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-414
- Référence fabricant:
- PSMN075-100MSEX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 71mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 65W | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEEE802.3at, RoHS | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 71mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 65W | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEEE802.3at, RoHS | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET is designed to support the next generation of Power-over-Ethernet. systems, capable of delivering up to 100W to each powered device. It meets the increased demands of applications such as large screen LCD displays, 3G/4G/Wi-Fi hotspots, and pan-tilt-zoom CCTV cameras. With Advanced features addressing soft-start procedures, short-circuit resilience, thermal management, and high power density, it ensures reliable and efficient performance for power sourcing equipment in demanding environments.
Enhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package
Very low IDSS
Liens connexes
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