Nexperia PSM N-Channel MOSFET, 18 A, 100 V Enhancement, 5-Pin LFPAK PSMN075-100MSEX
- N° de stock RS:
- 219-414
- Référence fabricant:
- PSMN075-100MSEX
- Fabricant:
- Nexperia
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
0,59 €
(TVA exclue)
0,71 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 2 673 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 0,59 € |
| 10 - 99 | 0,53 € |
| 100 - 499 | 0,49 € |
| 500 - 999 | 0,46 € |
| 1000 + | 0,41 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-414
- Référence fabricant:
- PSMN075-100MSEX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 71mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEEE802.3at, RoHS | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 71mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEEE802.3at, RoHS | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET is designed to support the next generation of Power-over-Ethernet. systems, capable of delivering up to 100W to each powered device. It meets the increased demands of applications such as large screen LCD displays, 3G/4G/Wi-Fi hotspots, and pan-tilt-zoom CCTV cameras. With Advanced features addressing soft-start procedures, short-circuit resilience, thermal management, and high power density, it ensures reliable and efficient performance for power sourcing equipment in demanding environments.
Enhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package
Very low IDSS
Liens connexes
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