Nexperia PSM Type N-Channel MOSFET, 200 A, 25 V Enhancement, 5-Pin LFPAK PSMN1R7-25YLDX
- N° de stock RS:
- 219-280
- Référence fabricant:
- PSMN1R7-25YLDX
- Fabricant:
- Nexperia
Sous-total (1 bobine de 1500 unités)*
1 476,00 €
(TVA exclue)
1 786,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 500 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 0,984 € | 1 476,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-280
- Référence fabricant:
- PSMN1R7-25YLDX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46.7nC | |
| Maximum Power Dissipation Pd | 135W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46.7nC | ||
Maximum Power Dissipation Pd 135W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
Liens connexes
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