Nexperia PSM Type N-Channel MOSFET, 30 A, 100 V Enhancement, 5-Pin LFPAK PSMN040-100MSEX
- N° de stock RS:
- 219-404
- Référence fabricant:
- PSMN040-100MSEX
- Fabricant:
- Nexperia
Sous-total (1 bobine de 1500 unités)*
1 080,00 €
(TVA exclue)
1 305,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 0,72 € | 1 080,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-404
- Référence fabricant:
- PSMN040-100MSEX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 36.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 91W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEEE802.3at, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 36.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 91W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEEE802.3at, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET is designed to meet the increased demands of Power-over-Ethernet systems, which now support up to 90W to each powered device. It addresses critical requirements for power sourcing equipment, including soft-start functionality, thermal management, and high power density, ensuring reliable and efficient performance in Advanced PoE solutions.
Enhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package for superior thermal and ruggedness performance
Liens connexes
- Nexperia PSM Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN040-100MSEX
- Nexperia PSM Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN075-100MSEX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN6R0-30YLDX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN1R0-30YLEX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN7R5-30MLDX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMNR67-30YLEX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMNR82-30YLEX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN6R4-30MLDX