Nexperia PSM Type N-Channel MOSFET, 120 A, 100 V Enhancement, 4-Pin LFPAK PSMN3R7-100BSEJ
- N° de stock RS:
- 219-348
- Référence fabricant:
- PSMN3R7-100BSEJ
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
4,34 €
(TVA exclue)
5,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 4,34 € |
| 10 - 99 | 3,90 € |
| 100 + | 3,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-348
- Référence fabricant:
- PSMN3R7-100BSEJ
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 3.95mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 25°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 405W | |
| Typical Gate Charge Qg @ Vgs | 176nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 3.95mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 25°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 405W | ||
Typical Gate Charge Qg @ Vgs 176nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET features very low RDS(on) and enhanced safe operating area performance. It is optimized for hot-swap controllers, capable of withstanding high inrush currents and minimizing I²R losses for improved efficiency. Applications include hot-swap, load switching, soft start, and e-fuse.
SOA for superior linear mode operation
LFPAK88 package for applications that demand the highest performance
Liens connexes
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