Nexperia NextPower-S3 Schottky-Plus Type N-Channel MOSFET, 240 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YSHX

Voir l’ensemble des MOSFETs

Sous-total (1 bobine de 1500 unités)*

2 788,50 €

(TVA exclue)

3 373,50 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Dernier stock RS
  • 1 500 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité
Prix par unité
la bobine*
1500 +1,859 €2 788,50 €

*Prix donné à titre indicatif

N° de stock RS:
219-292
Référence fabricant:
PSMN1R4-40YSHX
Fabricant:
Nexperia
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

240A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

NextPower-S3 Schottky-Plus

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Typical Gate Charge Qg @ Vgs

96nC

Maximum Power Dissipation Pd

333W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Pays d'origine :
PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control and battery protection. It offers high efficiency and reliable performance across a wide range of power management tasks.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

Liens connexes