STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- N° de stock RS:
- 214-958
- Référence fabricant:
- SCT040W120G3-4
- Fabricant:
- STMicroelectronics
Sous-total (1 unité)*
14,08 €
(TVA exclue)
17,04 €
(TVA incluse)
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Temporairement en rupture de stock
- 30 unité(s) expédiée(s) à partir du 01 avril 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 14,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-958
- Référence fabricant:
- SCT040W120G3-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247-4 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1200V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Gate Source Voltage Vgs | -10 to 22 V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS, ECOPACK2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247-4 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1200V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Gate Source Voltage Vgs -10 to 22 V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS, ECOPACK2 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Liens connexes
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