STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

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N° de stock RS:
719-470
Référence fabricant:
SCT025W120G3-4
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Series

Sct

Package Type

Hip-247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

388W

Forward Voltage Vf

2.7V

Maximum Operating Temperature

175°C

Height

25.27mm

Length

15.9mm

Pays d'origine :
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Very high operating junction temperature capability (TJ equal to 200 °C)

Source sensing pin for increased efficiency

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