STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

Voir l’ensemble des MOSFETs
Offre groupée disponible

Sous-total (1 unité)*

21,98 €

(TVA exclue)

26,60 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité
Prix par unité
1 - 921,98 €
10 - 4919,68 €
50 - 9918,14 €
100 +17,28 €

*Prix donné à titre indicatif

N° de stock RS:
719-470
Référence fabricant:
SCT025W120G3-4
Fabricant:
STMicroelectronics
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247-4

Series

Sct

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

388W

Typical Gate Charge Qg @ Vgs

73nC

Forward Voltage Vf

2.7V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.9mm

Width

5.1 mm

Height

25.27mm

Pays d'origine :
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Very high operating junction temperature capability (TJ equal to 200 °C)

Source sensing pin for increased efficiency

Liens connexes