Références fabricant

Infineon IKW20N60H3FKSA1, N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

N° de stock RS:: 892-2197
Référence fabricant:: IKW20N60H3FKSA1
Fabricant:: Infineon

Infineon IKW20N60H3FKSA1, N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

Offre groupée disponible

Consulter les options de prix de gros

Sous-total (1 paquet de 4 unités)*

25,14 €

(TVA exclue)

30,42 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Dernier stock RS

Plus 240 unité(s) expédiée(s) à partir du 30 octobre 2026
240 unité(s) finale(s) expédiée(s) à partir du 18 février 2027

Unité	Prix par unité	le paquet*
4 - 36	6,285 €	25,14 €
40 - 76	5,088 €	20,35 €
80 - 196	4,845 €	19,38 €
200 - 596	4,413 €	17,65 €
600 +	3,85 €	15,40 €

*Prix donné à titre indicatif

N° de stock RS:: 892-2197
Référence fabricant:: IKW20N60H3FKSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	40A
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	170W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	100kHz
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.5V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, JEDEC
	Series	TrenchStop
	Energy Rating	1.07mJ
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 40A
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 170W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 100kHz
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.5V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, JEDEC
	Series TrenchStop
	Energy Rating 1.07mJ
	Automotive Standard No

Infineon IGBT, 40A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW20N60H3FKSA1

This IGBT module is designed for high-speed switching applications within the power electronics sector. The device conforms to TO-247 IGBT package specifications and measures 16.13 x 5.21 x 21.1 mm. With a maximum collector-emitter voltage of 600V and a continuous collector current of 40A, it proves effective for various demanding applications in the electrical and mechanical sectors.

Features & Benefits

• Utilises TRENCHSTOP technology, delivering low VCEsat

• Achieves maximum junction temperature of 175°C for robust performance

• Features a soft, fast recovery anti-parallel diode enhancing reliability

• Ensures a switching speed of 100kHz for efficient operation

Applications

• Utilised in uninterruptible power supplies for reliable operation

• Effective in welding converters for high-performance welding

• Suitable for converters with high switching frequency requirements

What are the thermal resistance characteristics of this module?

The thermal resistance from junction to case is 0.88 K/W, while the diode thermal resistance from junction to case is 1.89 K/W, ensuring effective heat dissipation in demanding environments.

How does the IGBT handle short circuits and power dissipation?

It supports a pulsed collector current of up to 80A and a power dissipation capacity of 170W, allowing for robust performance under short circuit conditions. The device can handle up to 1000 short circuits with a safe operating time of 5μs.

What is the significance of gate capacitance in this IGBT?

The gate capacitance of 1100pF contributes to the efficient control of the gate-emitter voltage, leading to optimised switching characteristics and reducing energy losses during operation.

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