Infineon, Type N-Channel IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 911-4789
- Référence fabricant:
- IKW75N60TFKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
139,68 €
(TVA exclue)
169,02 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 150 unité(s) expédiée(s) à partir du 20 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 4,656 € | 139,68 € |
| 60 - 120 | 4,47 € | 134,10 € |
| 150 + | 4,33 € | 129,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 911-4789
- Référence fabricant:
- IKW75N60TFKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 428W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 20kHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | RoHS, JEDEC, Pb-free lead plating | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 428W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 20kHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals RoHS, JEDEC, Pb-free lead plating | ||
Automotive Standard No | ||
- Pays d'origine :
- GB
Infineon IGBT, 80A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW75N60TFKSA1
This IGBT is a high-performance semiconductor component designed for power electronics applications. With a maximum continuous collector current of 80A, it operates efficiently in high-voltage environments, rated for 600V. The device is packaged in a TO-247 format, ideal for through-hole mounting.
Features & Benefits
• Low collector-emitter saturation voltage enhances efficiency
• High switching speed reduces energy loss during operation
• Positive temperature coefficient ensures stable performance
• Compatible with a wide temperature range from -40°C to +175°C
Applications
• Suitable for use in frequency converters in industrial settings
• Ideal for uninterruptible power supply systems
• Utilised in motor control for automation
• Effective for renewable energy systems to ensure efficiency
What are the implications of short circuit withstand time for my application?
The short circuit withstand time of 5μs allows for reliable protection in applications that may encounter fault conditions, ensuring that the device can endure brief overcurrent situations without immediate failure.
How does the high switching speed impact system efficiency?
A high switching speed of 20kHz minimises energy losses during transitions, significantly improving overall system efficiency and performance, particularly in fast-response applications.
What are the thermal management considerations for optimal performance?
Thermal resistance values indicate effective heat dissipation from junction to case; managing junction temperatures within specified limits is crucial to maintain reliable operation and extend component lifespan.
Liens connexes
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