Infineon IKW75N60TFKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

This IGBT is a high-performance semiconductor component designed for power electronics applications. With a maximum continuous collector current of 80A, it operates efficiently in high-voltage environments, rated for 600V. The device is packaged in a TO-247 format, ideal for through-hole mounting.

• Low collector-emitter saturation voltage enhances efficiency
• High switching speed reduces energy loss during operation
• Positive temperature coefficient ensures stable performance
• Compatible with a wide temperature range from -40°C to +175°C

• Suitable for use in frequency converters in industrial settings
• Ideal for uninterruptible power supply systems
• Utilised in motor control for automation
• Effective for renewable energy systems to ensure efficiency

The short circuit withstand time of 5μs allows for reliable protection in applications that may encounter fault conditions, ensuring that the device can endure brief overcurrent situations without immediate failure.

A high switching speed of 20kHz minimises energy losses during transitions, significantly improving overall system efficiency and performance, particularly in fast-response applications.

Thermal resistance values indicate effective heat dissipation from junction to case

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.