Infineon IKW20N60H3FKSA1, N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 165-5481
- Référence fabricant:
- IKW20N60H3FKSA1
- Fabricant:
- Infineon
Sous-total (1 tube de 30 unités)*
103,20 €
(TVA exclue)
124,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 240 unité(s) expédiée(s) à partir du 18 février 2027
- Plus 240 unité(s) expédiée(s) à partir du 22 avril 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 3,44 € | 103,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5481
- Référence fabricant:
- IKW20N60H3FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 170W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 100kHz | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Energy Rating | 1.07mJ | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 170W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 100kHz | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC | ||
Series TrenchStop | ||
Automotive Standard No | ||
Energy Rating 1.07mJ | ||
- Pays d'origine :
- CN
Infineon IGBT, 40A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW20N60H3FKSA1
This IGBT module is designed for high-speed switching applications within the power electronics sector. The device conforms to TO-247 IGBT package specifications and measures 16.13 x 5.21 x 21.1 mm. With a maximum collector-emitter voltage of 600V and a continuous collector current of 40A, it proves effective for various demanding applications in the electrical and mechanical sectors.
Features & Benefits
• Utilises TRENCHSTOP technology, delivering low VCEsat
• Achieves maximum junction temperature of 175°C for robust performance
• Features a soft, fast recovery anti-parallel diode enhancing reliability
• Ensures a switching speed of 100kHz for efficient operation
Applications
• Utilised in uninterruptible power supplies for reliable operation
• Effective in welding converters for high-performance welding
• Suitable for converters with high switching frequency requirements
What are the thermal resistance characteristics of this module?
The thermal resistance from junction to case is 0.88 K/W, while the diode thermal resistance from junction to case is 1.89 K/W, ensuring effective heat dissipation in demanding environments.
How does the IGBT handle short circuits and power dissipation?
It supports a pulsed collector current of up to 80A and a power dissipation capacity of 170W, allowing for robust performance under short circuit conditions. The device can handle up to 1000 short circuits with a safe operating time of 5μs.
What is the significance of gate capacitance in this IGBT?
The gate capacitance of 1100pF contributes to the efficient control of the gate-emitter voltage, leading to optimised switching characteristics and reducing energy losses during operation.
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