Infineon, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

Sous-total (1 tube de 30 unités)*

42,84 €

(TVA exclue)

51,84 €

(TVA incluse)

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Unité
Prix par unité
le tube*
30 +1,428 €42,84 €

*Prix donné à titre indicatif

N° de stock RS:
165-5481
Référence fabricant:
IKW20N60H3FKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

170W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

100kHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.5V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Series

TrenchStop

Standards/Approvals

RoHS, JEDEC

Energy Rating

1.07mJ

Automotive Standard

No

Pays d'origine :
CN

Infineon IGBT, 40A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW20N60H3FKSA1


This IGBT module is designed for high-speed switching applications within the power electronics sector. The device conforms to TO-247 IGBT package specifications and measures 16.13 x 5.21 x 21.1 mm. With a maximum collector-emitter voltage of 600V and a continuous collector current of 40A, it proves effective for various demanding applications in the electrical and mechanical sectors.

Features & Benefits


• Utilises TRENCHSTOP technology, delivering low VCEsat

• Achieves maximum junction temperature of 175°C for robust performance

• Features a soft, fast recovery anti-parallel diode enhancing reliability

• Ensures a switching speed of 100kHz for efficient operation

Applications


• Utilised in uninterruptible power supplies for reliable operation

• Effective in welding converters for high-performance welding

• Suitable for converters with high switching frequency requirements

What are the thermal resistance characteristics of this module?


The thermal resistance from junction to case is 0.88 K/W, while the diode thermal resistance from junction to case is 1.89 K/W, ensuring effective heat dissipation in demanding environments.

How does the IGBT handle short circuits and power dissipation?


It supports a pulsed collector current of up to 80A and a power dissipation capacity of 170W, allowing for robust performance under short circuit conditions. The device can handle up to 1000 short circuits with a safe operating time of 5μs.

What is the significance of gate capacitance in this IGBT?


The gate capacitance of 1100pF contributes to the efficient control of the gate-emitter voltage, leading to optimised switching characteristics and reducing energy losses during operation.

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