Toshiba GT40QR21,F(O, Type N-Channel Discrete IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole
- N° de stock RS:
- 891-2743
- Référence fabricant:
- GT40QR21,F(O
- Fabricant:
- Toshiba
Temporairement en rupture de stock
- N° de stock RS:
- 891-2743
- Référence fabricant:
- GT40QR21,F(O
- Fabricant:
- Toshiba
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Toshiba | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | Discrete IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 2.5MHz | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Series | 6.5th generation | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Energy Rating | 0.29mJ | |
| Sélectionner tout | ||
|---|---|---|
Marque Toshiba | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type Discrete IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 2.5MHz | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Series 6.5th generation | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Energy Rating 0.29mJ | ||
- Pays d'origine :
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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