Toshiba GT20J341, Type N-Channel Discrete IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole

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Options de conditionnement :
N° de stock RS:
796-5055
Référence fabricant:
GT20J341
Fabricant:
Toshiba
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Marque

Toshiba

Maximum Continuous Collector Current Ic

20A

Product Type

Discrete IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

45W

Package Type

TO-220SIS

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

100kHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

±25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Series

GT20J341

Standards/Approvals

RoHS

Automotive Standard

No

IGBT Discretes, Toshiba


IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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