Toshiba GT50J342,Q(O IGBT, 80 A 600 V, 3-Pin TO-3P, Through Hole

Voir l’ensemble des IGBTs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
891-2740
Référence fabricant:
GT50J342,Q(O
Fabricant:
Toshiba
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Toshiba

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

394 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

0.38µs

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Gate Capacitance

4800pF

Energy Rating

1.7mJ

Maximum Operating Temperature

175 °C

Pays d'origine :
JP

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Liens connexes