Toshiba GT50JR22, Type N-Channel Discrete IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- N° de stock RS:
- 796-5064P
- Référence fabricant:
- GT50JR22
- Fabricant:
- Toshiba
Offre groupée disponible
Sous-total 10 unités (conditionné en tube)*
40,40 €
(TVA exclue)
48,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 96 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 10 - 49 | 4,04 € |
| 50 - 124 | 3,95 € |
| 125 - 249 | 3,90 € |
| 250 + | 3,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 796-5064P
- Référence fabricant:
- GT50JR22
- Fabricant:
- Toshiba
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Toshiba | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | Discrete IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | 6.5th generation | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Toshiba | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type Discrete IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series 6.5th generation | ||
Automotive Standard No | ||
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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