Semikron Danfoss SKM400GAL12E4, Type N-Channel IGBT4 Module, 40 A 1200 V, 5-Pin SEMITRANS3, Surface
- N° de stock RS:
- 687-4989
- Référence fabricant:
- SKM400GAL12E4
- Fabricant:
- Semikron Danfoss
Visuel non contractuel
Offre groupée disponible
Sous-total (1 unité)*
268,40 €
(TVA exclue)
324,76 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 12 unité(s) expédiée(s) à partir du 08 avril 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 268,40 € |
| 10 - 19 | 255,25 € |
| 20 - 49 | 242,36 € |
| 50 - 249 | 230,29 € |
| 250 + | 219,01 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-4989
- Référence fabricant:
- SKM400GAL12E4
- Fabricant:
- Semikron Danfoss
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Semikron Danfoss | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT4 Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Package Type | SEMITRANS3 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 5 | |
| Switching Speed | 12kHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747-1, UL E63532 | |
| Series | SEMITRANS 3 GAL | |
| Width | 61.4 mm | |
| Height | 30.5mm | |
| Length | 106.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Semikron Danfoss | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT4 Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Package Type SEMITRANS3 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 5 | ||
Switching Speed 12kHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.4V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747-1, UL E63532 | ||
Series SEMITRANS 3 GAL | ||
Width 61.4 mm | ||
Height 30.5mm | ||
Length 106.4mm | ||
Automotive Standard No | ||
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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