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Sélectionner tout	Attribut	Valeur
	Marque	Semikron Danfoss
	Product Type	IGBT Module
	Maximum Continuous Collector Current Ic	469A
	Maximum Collector Emitter Voltage Vceo	1200V
	Package Type	SEMiX3p
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	11
	Maximum Collector Emitter Saturation Voltage VceSAT	2.4V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Height	17mm
	Standards/Approvals	No
	Length	150mm
	Series	Trench
	Automotive Standard	No

	Sélectionner tout
	Marque Semikron Danfoss
	Product Type IGBT Module
	Maximum Continuous Collector Current Ic 469A
	Maximum Collector Emitter Voltage Vceo 1200V
	Package Type SEMiX3p
	Mount Type Surface
	Channel Type Type N
	Pin Count 11
	Maximum Collector Emitter Saturation Voltage VceSAT 2.4V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Height 17mm
	Standards/Approvals No
	Length 150mm
	Series Trench
	Automotive Standard No

SEMiX® Dual IGBT Modules

Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.

For suitable press-fit gate driver modules see 122-0385 to 122-0387

• Low profile solder-free mounting package

• Trenchgate technology IGBTs

• VCE(sat) has positive temperature coefficient

• High short circuit current capability

• Press-fit pins as auxiliary contacts

• UL recognized

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Semikron Danfoss SEMiX303GB12E4p, Type N-Channel IGBT Module, 469 A 1200 V, 11-Pin SEMiX3p, Surface

Frais de livraison offerts pour toute commande de plus de 90,00 €

SEMiX® Dual IGBT Modules

IGBT Modules, Semikron

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