STMicroelectronics STGD4H60DF Single Collector IGBT, 4 A 600 V, 3-Pin TO-252, Surface
- N° de stock RS:
- 287-7044
- Référence fabricant:
- STGD4H60DF
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 2500 unités)*
882,50 €
(TVA exclue)
1 067,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 05 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 - 2500 | 0,353 € | 882,50 € |
| 5000 - 7500 | 0,349 € | 872,50 € |
| 10000 + | 0,345 € | 862,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 287-7044
- Référence fabricant:
- STGD4H60DF
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 4A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 75W | |
| Number of Transistors | 1 | |
| Configuration | Single Collector | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 1.7mm | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS | |
| Width | 6.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 4A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 75W | ||
Number of Transistors 1 | ||
Configuration Single Collector | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 1.7mm | ||
Height 2.3mm | ||
Standards/Approvals RoHS | ||
Width 6.7mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Trench gate field stop is an IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Low thermal resistance
Short circuit rated
Soft and fast recovery antiparallel diode
Liens connexes
- STMicroelectronics STGD4H60DF Single Collector IGBT 3-Pin TO-252, Surface
- Bourns IGBT 600 V TO-252
- STMicroelectronics STGWA25IH135DF2 25 A 1350 V Through
- STMicroelectronics STGWA35IH135DF2 35 A 1350 V Through
- Bourns BIDD05N60T IGBT 600 V TO-252
- Infineon IGBT, 10 A 600 V TO-252
- Infineon IGBT, 8 A 600 V TO-252
- Infineon IGBT, 6 A 600 V TO-252