STMicroelectronics STGD4H60DF Single Collector IGBT, 4 A 600 V, 3-Pin TO-252, Surface
- N° de stock RS:
- 287-7045
- Référence fabricant:
- STGD4H60DF
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
2,22 €
(TVA exclue)
2,68 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 300 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 28 | 1,11 € | 2,22 € |
| 30 - 58 | 1,01 € | 2,02 € |
| 60 - 118 | 0,895 € | 1,79 € |
| 120 - 238 | 0,805 € | 1,61 € |
| 240 + | 0,72 € | 1,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 287-7045
- Référence fabricant:
- STGD4H60DF
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 4A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-252 | |
| Configuration | Single Collector | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.7mm | |
| Length | 1.7mm | |
| Standards/Approvals | RoHS | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current Ic 4A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-252 | ||
Configuration Single Collector | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.7mm | ||
Length 1.7mm | ||
Standards/Approvals RoHS | ||
Height 2.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Trench gate field stop is an IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Low thermal resistance
Short circuit rated
Soft and fast recovery antiparallel diode
Liens connexes
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