Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3
- N° de stock RS:
- 258-7725
- Référence fabricant:
- IKB10N60TATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
9,30 €
(TVA exclue)
11,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 955 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 1,86 € | 9,30 € |
| 25 - 45 | 1,676 € | 8,38 € |
| 50 - 120 | 1,582 € | 7,91 € |
| 125 - 245 | 1,468 € | 7,34 € |
| 250 + | 1,36 € | 6,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-7725
- Référence fabricant:
- IKB10N60TATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 110 W | |
| Number of Transistors | 1 | |
| Configuration | Single Collector, Single Emitter, Single Gate | |
| Package Type | TO-263-3 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 110 W | ||
Number of Transistors 1 | ||
Configuration Single Collector, Single Emitter, Single Gate | ||
Package Type TO-263-3 | ||
The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.
Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
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