Infineon IKA15N60TXKSA1 IGBT, 15 A 600 V TO-220
- N° de stock RS:
- 258-0995
- Référence fabricant:
- IKA15N60TXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
3,70 €
(TVA exclue)
4,48 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,85 € | 3,70 € |
| 20 - 48 | 1,66 € | 3,32 € |
| 50 - 98 | 1,565 € | 3,13 € |
| 100 - 198 | 1,465 € | 2,93 € |
| 200 + | 1,35 € | 2,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0995
- Référence fabricant:
- IKA15N60TXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 15A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 35.7W | |
| Package Type | TO-220 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 15A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 35.7W | ||
Package Type TO-220 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1 | ||
Series TRENCHSTOPTM | ||
Automotive Standard No | ||
The Infineon hard-switching 600 V, 15 A TRENCHSTOP IGBT3 discrete co-packed with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and field stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Very soft, fast recovery anti-parallel Emitter Controlled diode
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
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