onsemi NXH80T120L3Q0S3G IGBT Module 1200 V Q0PACK - Case 180AB, Surface
- N° de stock RS:
- 245-6993
- Référence fabricant:
- NXH80T120L3Q0S3G
- Fabricant:
- onsemi
Informations sur le stock actuellement non accessibles
- N° de stock RS:
- 245-6993
- Référence fabricant:
- NXH80T120L3Q0S3G
- Fabricant:
- onsemi
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 188W | |
| Number of Transistors | 4 | |
| Package Type | Q0PACK - Case 180AB | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 13.9mm | |
| Length | 55.2mm | |
| Series | NXH80T120L3Q0S3G | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 188W | ||
Number of Transistors 4 | ||
Package Type Q0PACK - Case 180AB | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 13.9mm | ||
Length 55.2mm | ||
Series NXH80T120L3Q0S3G | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Q0PACK Module is a power module containing a T type neutral point clamped three level inverter stage. The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
Low Switching Loss
Low VCESAT
Compact 65.9 mm x 32.5 mm x 12 mm Package
Options with Pre applied Thermal Interface Material and without Pre applied TIM
Options with Solderable Pins and Press fit Pins thermistor
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