onsemi IGBT Module 1200 V Q0PACK - Case 180AB, Surface

Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
245-6992
Référence fabricant:
NXH80T120L3Q0S3G
Fabricant:
onsemi
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Marque

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

4

Maximum Power Dissipation Pd

188W

Package Type

Q0PACK - Case 180AB

Mount Type

Surface

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

NXH80T120L3Q0S3G

Height

13.9mm

Length

55.2mm

Width

32.8 mm

Automotive Standard

No

The ON Semiconductor Q0PACK Module is a power module containing a T type neutral point clamped three level inverter stage. The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Low Switching Loss

Low VCESAT

Compact 65.9 mm x 32.5 mm x 12 mm Package

Options with Pre applied Thermal Interface Material and without Pre applied TIM

Options with Solderable Pins and Press fit Pins thermistor

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