onsemi NXH40B120MNQ0SNG IGBT Module Q0PACK - Case 180AJ, Surface
- N° de stock RS:
- 245-6982
- Référence fabricant:
- NXH40B120MNQ0SNG
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
80,63 €
(TVA exclue)
97,56 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 80,63 € |
| 10 + | 69,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 245-6982
- Référence fabricant:
- NXH40B120MNQ0SNG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT Module | |
| Maximum Power Dissipation Pd | 118W | |
| Number of Transistors | 2 | |
| Package Type | Q0PACK - Case 180AJ | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 13.9mm | |
| Width | 32.8 mm | |
| Series | NXH40B120MNQ0SNG | |
| Length | 55.2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT Module | ||
Maximum Power Dissipation Pd 118W | ||
Number of Transistors 2 | ||
Package Type Q0PACK - Case 180AJ | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 13.9mm | ||
Width 32.8 mm | ||
Series NXH40B120MNQ0SNG | ||
Length 55.2mm | ||
Automotive Standard No | ||
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel Plated DBC
The ON Semiconductor 3 Channel Boost Q1 Power Module is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V 40 m SiC MOSFETs
Low Reverse Recovery and Fast Switching SiC Diodes
1200 V Bypass and Anti parallel Diodes
Low Inductive Layout Solderable Pins Thermistor
This Device is Pb Free, Halogen Free/BFR Free and is RoHS Compliant
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